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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR 2SA1037AK*LT1 3 1 BASE 2 EMITTER 1 2 CASE 318-08, STYLE 6 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V EBO SOT- 23 (TO-236AB) Value -50 -60 -6.0 -150 0.2 150 -55 ~+150 Unit V V V mAdc W C C IC PC Tj T stg DEVICE MARKING 2SA1037AK*LT1 =G3F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Collector-Emitter Breakdown Voltage (IC = -1 mA) Emitter-Base Breakdown Voltage (IE = - 50 A) Collector-Base Breakdown Voltage (IC = - 50 A) Collector Cutoff Current (VCB = - 60 V) Emitter cutoff current (VEB = - 6 V) Collector-emitter saturation voltage (IC/ IB = - 50 mA / - 5m A) DC current transfer ratio (V CE = - 6 V, I C= -1mA) Transition frequency (V CE = - 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = - 12 V, I E= 0A, f =1MHz ) Symbol V (BR)CEO Min - 50 -6 - 60 -- -- -- 120 -- -- Typ -- -- -- -- -- -- -- 140 4.0 Max -- -- -- - 0.1 - 0.1 -0.5 560 -- 5.0 Unit V V V A A V -- MHz pF V (BR)EBO V (BR)CBO I CBO I EBO V CE(sat) h FE fT C ob h FE values are classified as follows: hFE * Q 120~270 R 180~390 S 270~560 M35-1/3 LESHAN RADIO COMPANY, LTD. 2SA1037AK*LT1 Fig.1 Grounded emitter propagation characteristics -50 Fig.2 Grounded emitter output characteristics( ) -10 -35.0 T A = 25C -31.5 -28.0 -24.5 -20 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) T A = 100C 25C - 40C VCE= -10 V -8 -10 -50 -6 -21.0 -17.5 -2 -1 -4 -14.0 -10.5 -0.5 -2 -7.0 -3.5A -0.2 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 0 -0.4 -0.8 -1.2 -1.6 I B =0 -2.0 V BE , BASE TO EMITTER VOLTAGE(V) V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.3 Grounded emitter output characteristics( ) -100 Fig.4 DC current gain vs. collector current ( ) 500 T A = 25C I C, COLLECTOR CURRENT (mA) -80 T A = 25C h FE, DC CURRENT GAIN -60 500 450 400 350 300 VCE= -5 V -3V -1V 200 -250 -200 -40 -150 -100 100 -20 -50 A I B =0 0 -1 -2 -3 -4 -5 50 0 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 V CE , COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (mA) Fig.5 DC current gain vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 500 -1 T A = 100C 25C T A = 25C -0.5 h FE, DC CURRENT GAIN -40C 200 -0.2 I C /I B = 50 -0.1 100 20 10 50 -0.05 VCE= - 6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) M35-2/3 LESHAN RADIO COMPANY, LTD. 2SA1037AK*LT1 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) -1 Fig.8 Gain bandwidth product vs. emitter current 1000 I C /I B = 10 f r , TRANSITION FREQUENCY(MHz) 500 T A = 25C V CE = -12V -0.5 -0.2 200 -0.1 T A = 100C 25C -40C 100 -0.05 50 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 I C, COLLECTOR CURRENT (mA) I E, EMITTER CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) 20 C ib 10 T A = 25C f =1MHz I E = 0A I C = 0A C ob 5 2 -0.5 -1 -2 -5 -10 -20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) M35-3/3 |
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